Picosun's new Picoflow(TM) Diffusion Enhancer Expands the Borders of ALD
Poster: SySAdmin
Posted on August 30, 2012 at 5:07:01 PM
Picosun's new Picoflow(TM) Diffusion Enhancer Expands the Borders of ALD
ESPOO, Finland, August 30, 2012/PRNewswire/ --
Picosun Oy, Finnish, globally operating manufacturer of top-quality Atomic Layer
Deposition (ALD) systems reports excellent deposition results with its new Picoflow(TM)
diffusion enhancer feature. At customer sites in Asia and Europe, ultra-high conformality
and uniformity ALD metal oxide thin films were deposited on extremely challenging high
aspect ratio (HAR) trenches on silicon wafers and complicated microchannel structures on
silicon chip.
The highest aspect ratios of the trenches were 1:300 and even 1:1000. In such deep
structures conventional diffusion is not fast enough to carry the precursors to the bottom
of the trench. Picosun's novel, innovative Picoflow(TM) diffusion enhancer feature
lengthens the time the precursors stay in the reaction chamber ("stopped-flow") without
risk of precursor back-diffusion to the inlets or particle formation. In addition to HAR
structures, this feature is very useful also when coating powders or through-porous
samples such as microchannel plates. Titanium dioxide film thickness variation down to
only plus or minus2 nm for 100 nm thick film has been achieved with Picoflow(TM)
technology.
Microchannel silicon chips have several applications in e.g. microfluidistics, sensors
and MEMS devices. With ALD thin films they can be protected, passivated or functionalized,
changing the hydrophilicity, chemical, electrical or optical behaviour.
Silicon trench structures have a crucial function in today's micro- and
nanoelectronics. The level of system integration and the amount of individual components
in the devices has increased so much that the traditional 2D component stacking is not
enough anymore. Therefore the production has moved towards 3D packaging where the
components are piled on top of each other and the necessary connections are realized
through so-called through-silicon-via (TSV) structures. TSVs are a prime example of trench
structures and typically conductive metal films, seed layers or passivation layers are
required to cover uniformly and conformally the insides of the trench. Picosun's
Picoflow(TM) expands the possibilities of ALD in these new industrial applications for
more efficient future electronics devices.
Picosun Oy is Finland-based, world-wide operating manufacturer of state-of-the-art ALD
systems, representing continuity to almost four decades of pioneering, exclusive ALD
reactor design and manufacturing. Picosun's global headquarters are located in Espoo,
Finland, its production facilities in Kirkkonummi, Finland, its US headquarters in
Detroit, Michigan, and its Asian headquarters in Singapore. Today, PICOSUN(TM) ALD tools
are in continuous production and R&D use in numerous frontline industries and research
organizations across four continents.
Source: Picosun OY
Juhana Kostamo, Managing Director, email juhana.kostamo@picosun.com; tel. +358-50-321-1955
ESPOO, Finland, August 30, 2012/PRNewswire/ --
Picosun Oy, Finnish, globally operating manufacturer of top-quality Atomic Layer
Deposition (ALD) systems reports excellent deposition results with its new Picoflow(TM)
diffusion enhancer feature. At customer sites in Asia and Europe, ultra-high conformality
and uniformity ALD metal oxide thin films were deposited on extremely challenging high
aspect ratio (HAR) trenches on silicon wafers and complicated microchannel structures on
silicon chip.
The highest aspect ratios of the trenches were 1:300 and even 1:1000. In such deep
structures conventional diffusion is not fast enough to carry the precursors to the bottom
of the trench. Picosun's novel, innovative Picoflow(TM) diffusion enhancer feature
lengthens the time the precursors stay in the reaction chamber ("stopped-flow") without
risk of precursor back-diffusion to the inlets or particle formation. In addition to HAR
structures, this feature is very useful also when coating powders or through-porous
samples such as microchannel plates. Titanium dioxide film thickness variation down to
only plus or minus2 nm for 100 nm thick film has been achieved with Picoflow(TM)
technology.
Microchannel silicon chips have several applications in e.g. microfluidistics, sensors
and MEMS devices. With ALD thin films they can be protected, passivated or functionalized,
changing the hydrophilicity, chemical, electrical or optical behaviour.
Silicon trench structures have a crucial function in today's micro- and
nanoelectronics. The level of system integration and the amount of individual components
in the devices has increased so much that the traditional 2D component stacking is not
enough anymore. Therefore the production has moved towards 3D packaging where the
components are piled on top of each other and the necessary connections are realized
through so-called through-silicon-via (TSV) structures. TSVs are a prime example of trench
structures and typically conductive metal films, seed layers or passivation layers are
required to cover uniformly and conformally the insides of the trench. Picosun's
Picoflow(TM) expands the possibilities of ALD in these new industrial applications for
more efficient future electronics devices.
Picosun Oy is Finland-based, world-wide operating manufacturer of state-of-the-art ALD
systems, representing continuity to almost four decades of pioneering, exclusive ALD
reactor design and manufacturing. Picosun's global headquarters are located in Espoo,
Finland, its production facilities in Kirkkonummi, Finland, its US headquarters in
Detroit, Michigan, and its Asian headquarters in Singapore. Today, PICOSUN(TM) ALD tools
are in continuous production and R&D use in numerous frontline industries and research
organizations across four continents.
Source: Picosun OY
Juhana Kostamo, Managing Director, email juhana.kostamo@picosun.com; tel. +358-50-321-1955